Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts
3. Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
4. Reliability study of InAs∕InGaAs quantum dot diode lasers
5. High-performance 1.5 [micro sign]m GaInNAsSb lasers grown on GaAs
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1. In segregation influence on properties of InAs quantum dots in dots-in-a-well;Japanese Journal of Applied Physics;2024-05-01
2. Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range;Physical Review Applied;2023-10-04
3. E‐Band InAs/GaAs Trilayer Quantum Dot Lasers;physica status solidi (a);2021-10-05
4. Impact of Digital Alloy Capping Layers on Bilayer InAs Quantum Dot Heterostructures;IEEE Transactions on Nanotechnology;2020
5. Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure;Journal of Alloys and Compounds;2018-03
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