1. Heteroepitaxial Thermal Gradient Solution Growth of GaN
2. E. Meissner, G. Sun, S. Hussy, B. Birkmann, J. Friedrich, G. Müller, in: Proc. 21st Century COE Joint Workshop on Bulk Nitrides, Tokyo 2003, IPAP Conf. Ser 4 (2004) 46.
3. Characterisation of GaN crystals and epilayers grown from a solution at room pressure
4. C.G. Van de Walle, J.E. Northrup, J. Neugebauer, in: P. Specht, T.R. Weatherford, P. Kiesel, T. Marek, S. Malzer (Eds.), Proceedings of the Fourth Symposium on Non-Stochiometric III–V–Compounds, Pacific Grove, California 2002 (Physik mikrostrukturierter Halbleiter, vol. 27) 2002. p. 11.
5. Gallium vacancies and the yellow luminescence in GaN