Author:
Nishikawa S.,Nakao Y.,Naoi H.,Araki T.,Na H.,Nanishi Y.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. TEM characterization of InN films grown by RF‐MBE
2. Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy
3. T. Araki, H. Kagatsume, H. Aono, Y. Nanishi, Mater. Res. Soc. Symp. Proc. 639 (2001) G6.20.1.
4. Molecular beam epitaxial growth of high-quality GaN nanocolumns
5. V.V. Mamutin, V.A. Vekshin, V.N. Jmerik, V.V. Ratnikov, V.Y. Davydov, N.A. Cherkashin, S.V. Ivanov, G. Pozina, J.P. Bergaman, B. Monemar, in: Proceedings of the International Workshop on Nitride Semiconductors, IPAP Conf. Ser. 1 (2000) 413.
Cited by
17 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献