Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. M. Aoki, M. Kondow, T. Kitatani, S. Nakatsuka, M. Kudo, S. Tsuji, in: IEEE 18th Semiconductor Laser Conference, 2002, TuC4.
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4. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
5. Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
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1. The nonlinear optical properties of GaAs/GaAlAs triple quantum well: Role of the electromagnetic fields and structural parameters;Physica B: Condensed Matter;2022-12
2. GaInNAs(Sb) Long-Wavelength VCSELs;Springer Series in Optical Sciences;2012-10-16
3. 1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth;Electronics Letters;2009
4. Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers;IEEE Journal of Quantum Electronics;2008-07
5. High performance 1.3 μm GaInNAs quantum well lasers on GaAs;SPIE Proceedings;2008-02-07
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