Solidification using a baffle in sealed ampoules: Ground-based experiments-Reference-Cited by-同舟云学术

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Solidification using a baffle in sealed ampoules: Ground-based experiments

Published:2006-09 Issue:1 Volume:295 Page:20-30
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Churilov A.,Ostrogorsky A.G.,Volz M.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. A.G. Ostrogorsky, C. Marin, A. Churilov, M. Volz, W.A. Bonner, R.A. Spivey, G. Smith, Proceedings of 41st AIAA Aerospace Sciences Meeting & Exhibit, 2003, p. 1309.

2. Chemical Engineering Progress, 2002, p. 18.

3. Materials Today, 2002, p. 17

4. Seventh International Conference on Solid-State and Integrated-Circuit Technology;Ashley,2004

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1. Disk-driven flows and interface shape in vertical Bridgman growth with a baffle;Progress in Crystal Growth and Characterization of Materials;2021-02

2. Axial segregation in crystal growth from a thin melt layer;Journal of Crystal Growth;2019-11

3. Melt Growth of Semiconductor Crystals Under Microgravity;Physical Science Under Microgravity: Experiments on Board the SJ-10 Recoverable Satellite;2019

4. Interface control by rotating submerged heater/baffle in vertical Bridgman configuration;Journal of Crystal Growth;2018-09

5. Problem of attaining constant impurity concentration over ingot height;Modern Electronic Materials;2018-06-01

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