Disk-driven flows and interface shape in vertical Bridgman growth with a baffle-Reference-Cited by-同舟云学术

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Disk-driven flows and interface shape in vertical Bridgman growth with a baffle

Published:2021-02 Issue:1 Volume:67 Page:100512
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Ostrogorsky A.G.

Funder

NASA Exoplanet Science Institute

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference88 articles.

1. The Growth of Crystals from the Melt;Brice,1965

2. Vertical bridgman growth of binary compound semiconductors;Jurisch,2015

3. Segregation and Component Distribution;Ostrogorsky,2015

4. Crystal Growth from the Melt;Muller,1988

5. Convection During Crystal Growth on Earth and in Space;Nikitin;J Cryst. Growth,1981

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1. Advances of interface, flow, and stress control for VB crystal growth: An overview;Progress in Crystal Growth and Characterization of Materials;2023-12

2. Effects of Forced Convection on the Purification of Metallurgical Silicon by Directional Solidification;Silicon;2023-11-08

3. Numerical investigation of the VB growth of CaF2 crystal with supercooled crucible wall;Journal of Crystal Growth;2023-09

4. A review on ternary CuFeS2 compound: Fabrication strategies and applications;Journal of Alloys and Compounds;2023-03

5. Interface Shape under the Insulating Baffle in Vertical Bridgman Systems;Crystal Research and Technology;2022-03

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