Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates-Reference-Cited by-同舟云学术

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Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Published:2006-05 Issue:2 Volume:290 Page:504-512
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wagner B.P.,Reitmeier Z.J.,Park J.S.,Bachelor D.,Zakharov D.N.,Liliental-Weber Z.,Davis R.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference45 articles.

1. GaN: Processing, defects, and devices

2. III–nitrides: Growth, characterization, and properties

3. Spontaneous polarization and piezoelectric constants of III-V nitrides

4. Macroscopic polarization and band offsets at nitride heterojunctions

5. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN Substrate Material for III–V Semiconductor Epitaxy Growth;Light-Emitting Diodes;2019

2. Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆;Reference Module in Materials Science and Materials Engineering;2017

3. Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure;Journal of Physics: Conference Series;2013-11-29

4. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate;Technical Physics Letters;2013-03

5. HVPE growth of GaN in the semipolar direction on planar Si(210);physica status solidi (c);2013-01-22

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