Band alignments of InGaPN/GaPN quantum well structures on GaP and Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III-V-N Alloy Layers
3. Control of structural defects in group III V N alloys grown on Si
4. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
5. Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate
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1. GaNP-based photovoltaic device integrated on Si substrate;Solar Energy Materials and Solar Cells;2020-03
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3. Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation;Journal of Crystal Growth;2016-02
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