The role of Sb in the molecular beam epitaxy growth of 1.30–1.55μm wavelength GaInNAs/GaAs quantum well with high indium content
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInNAs long-wavelength lasers: progress and challenges
3. Design Considerations of GaInNAs-GaAs Quantum Wells: Effects of Indium and Nitrogen Mole Fractions
4. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 [micro sign]m
5. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
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1. Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application;ACS Applied Electronic Materials;2020-08-27
2. Effects of growth rate on structural property and adatom migration behaviors for growth of GaInNAs/GaAs (001) by molecular beam epitaxy;Journal of Applied Physics;2018-03-07
3. Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy;Semiconductor Science and Technology;2017-10-26
4. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15
5. Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires;Nanoscale Research Letters;2016-02-01
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