Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes inp-(Ga,Mn)As epilayers
2. High-quality GaMnAs films grown with arsenic dimers
3. Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution
4. Ferromagnetic Ga1−xMnxAs produced by ion implantation and pulsed-laser melting
5. Structural and optical study of GaMnAs/GaAs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Storage moduli, loss moduli and damping factor of GaAs and Ga1−xMnxAs thin films using DMA 2980;Materials Science in Semiconductor Processing;2014-04
2. Preparation, Magnetic and Electric Properties of (110)-Oriented Ordered Fe2-xTixO3 Thin Films;Journal of the Japan Society of Powder and Powder Metallurgy;2014
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