Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
2. MBE growth of high-quality GaAs
3. Summary Abstract: Very high purity GaAs: Free exciton dominated 5-K photoluminescence and magnetophotoluminescence spectra
4. Very high purity GaAs: Free exciton dominated 5 K photoluminescence and magnetophotoluminescence spectra
5. Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts
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1. Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base;Journal of Applied Physics;2011-05
2. Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy;Journal of Crystal Growth;2007-04
3. Deep-level optical transitions of (Ga,Mn)As in high magnetic fields;Physical Review B;2005-02-25
4. Optical transitions of liquid phase epitaxy grown (Ga,Mn)As in magnetic fields;Current Applied Physics;2004-08
5. Liquid phase epitaxial growth and characterization of Ga1−xMnxAs layers on (100) GaAs substrate;Journal of Crystal Growth;2003-05
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