Three-dimensional strain distribution during stacking of self-assembled InGaAs/GaAs quantum dot layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
3. CMOS exponential function generator
4. Exciton Rabi Oscillation in a Single Quantum Dot
5. Polarization-correlated photon pairs from a single quantum dot
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum Dot Structures;Japanese Journal of Applied Physics;2010-04-20
2. AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS;Nano;2010-04
3. Characterization of Columnar InAs/GaAs Quantum-Dot Structures Using Grazing Incidence X-ray Diffraction;Japanese Journal of Applied Physics;2009-04-20
4. Polarization Symmetry of Vertical Photoluminescence from Columnar InAs/GaAs Quantum Dots;e-Journal of Surface Science and Nanotechnology;2009
5. Computational Study on the In-Plane Symmetry of Electron Wavefunctions in Self-Assembled InAs/GaAs Quantum Dots;Journal of Nanoscience and Nanotechnology;2009-01-01
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