Polarization Symmetry of Vertical Photoluminescence from Columnar InAs/GaAs Quantum Dots-Reference-Cited by-同舟云学术

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Polarization Symmetry of Vertical Photoluminescence from Columnar InAs/GaAs Quantum Dots

Published:2009 Issue: Volume:7 Page:537-540
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Mukai Kohki¹,Watanabe Keita¹

Affiliation:

1. Department of Mechanical Engineering and Materials Science, Yokohama National University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/7/0/7_0_537/_pdf

Reference23 articles.

1. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

2. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

3. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments

4. [4] M. Sugawara, T. Akiyama, N. Hatori, Y. Nakata, K. Otsubo, and H. Ebe, proc. SPIE 4905, 259 (2002).

5. Quantum dot amplifiers with high output power and low noise

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-Controlled Symmetry of Linear Polarization of Photoluminescence from InGaAs-Buried InAs/GaAs Quantum Dots;Japanese Journal of Applied Physics;2013-06-01

2. Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources;Nanoscale Research Letters;2012-11-05

3. Electronic structure and optical anisotropy of InGaAs quantum rods studied by photoreflectance and photoluminescence;physica status solidi (c);2012-05-21

4. Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum Dot Structures;Japanese Journal of Applied Physics;2010-04-20

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