In situ real-time analysis of the MBE growth of CdTe on Ge: A comparison of ellipsometry data analysis techniques-Reference-Cited by-同舟云学术

In situ real-time analysis of the MBE growth of CdTe on Ge: A comparison of ellipsometry data analysis techniques

Published:2006-11 Issue:2 Volume:296 Page:129-134
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Badano G.,Ballet P.,Baudry X.,Zanatta J.P.,Million A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Ellipsometric profiling of HgCdTe heterostructures

2. Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength

3. Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays

4. HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures

5. Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements

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1. Observations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery;Optical Materials;2019-06

2. Molecular Beam Epitaxy of HgCdTe Materials and Detectors;Comprehensive Semiconductor Science and Technology;2011

3. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010

4. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

5. Thick epitaxial CdTe films grown by close space sublimation on Ge substrates;Journal of Physics D: Applied Physics;2008-12-12