MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3μm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Quantum dots for lasers, amplifiers and computing
2. Strain engineering of self-organized InAs quantum dots
3. Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
4. 1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine
5. High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers
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1. 1.16 μm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition;Acta Physica Polonica A;2018-08
2. Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2017-11
3. Finite size and length effects on bandgap of CdSe nanorods;Physical Chemistry Chemical Physics;2017
4. The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy;Journal of Theoretical and Applied Physics;2013
5. MOCVD Growth and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots;Advanced Materials Research;2012-09
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