Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. S. Nakamura, S. F. Chichibu, (Ed.), Introduction to Nitride Semiconductor Blue Laser and Light Emitting Diodes,Taylor & Francis, London and New York, 2000.
2. GaN growth on sapphire
3. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
4. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
5. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy
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