Growth of strain relaxed Si1−yCy films using SOI substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
2. Growth of strain relaxed Si1−yCy on Si buffer layer by gas-source MBE
3. New approach to grow pseudomorphic structures over the critical thickness
4. New approach to the growth of low dislocation relaxed SiGe material
5. Relaxed Si1−xGex films with reduced dislocation densities grown by molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates;Materials Science in Semiconductor Processing;2017-11
2. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si 1−x C x heterostructures using the defect control by ion implantation technique;Journal of Crystal Growth;2017-06
3. Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-01
4. Thermal stability improvement of Si1−yCy layers by SiO2 cap layers;Thin Solid Films;2008-11
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