Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Spin Relaxation in GaAs(110) Quantum Wells
2. Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)
3. Growth mechanism of GaAs on (110) GaAs studied by high-energy electron diffraction and atomic force microscopy
4. Study of the epitaxial growth of GaAs(110) films by molecular beam epitaxy
5. Different growth modes in GaAs(110) homoepitaxy
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1. Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells;ACS Applied Materials & Interfaces;2021-10-13
2. Impact of Outer Shell Structure and Localization Effects on Charge Carrier Dynamics in GaAs/(In,Ga)As Nanowire Core–Shell Quantum Wells;physica status solidi (RRL) – Rapid Research Letters;2019-02-07
3. Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2014-10
4. Electron Spin Polarization Induced by Linearly Polarized Light in a (110) GaAs Quantum-Well Waveguide;Physical Review Letters;2009-05-21
5. Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection;Applied Physics Letters;2009-03-30
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