Reactive sputter deposition of AlInN thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Growth and some properties of Al x In 1-x N crystalline thin films
2. Growth of Al In1−N single crystal films by microwave-excited metalorganic vapor phase epitaxy
3. Crystal Structure and Orientation of AlxIn$_{{\bf 1}-\ninmb{x}}$N Epitaxial Layers Grown on (0001) \mbα-Al$_{\bf 2}$O$_{\bf 3}$ Substrates
4. Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
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1. Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering;Materials;2022-10-21
2. Optical and electrical properties of Al1-xInxN films with a wide middle-composition range by RF sputtering;Applied Physics A;2022-01-22
3. Study of InAlN thin films deposited on silicon, ITO/PET, and ITO/GLASS substrates at room temperature for its possible use in solar cells;Journal of Materials Science: Materials in Electronics;2021-11-25
4. Sputtering AlN/InxAl1−xN distributed Bragg reflector across the full visible range on Si and SiO2 substrates;Optics Letters;2020-12-10
5. Mechanical properties of single-phase Al1−In N films across the compositional range (0 ≤ x ≤ 0.7) grown by radio-frequency magnetron sputtering;Applied Surface Science;2020-02
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