Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment
2. Silicon doping of GaN using disilane
3. Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane
4. Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
5. Dislocation generation in GaN heteroepitaxy
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