Author:
Kim S.M.,Furukawa Y.,Yonezu H.,Umeno K.,Wakahara A.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
2. S.M. Kim, S.Y. Moon, A. Utsumi, Y. Furukawa, H. Yonezu, A. Wakahara, in: Proceedings of the 31st International Symposium on Compound Semiconductors, Seoul, Korea, 2004, p. 40.
3. Optical properties of lattice matched InxGa1-xP1-yNyheteroepitaxial layers on GaP
4. Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy
5. Dislocation-Free InxGa1-xP1-yNy/GaP1-zNzDouble-Heterostructure Light Emitting Diode on Si Substrate
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