Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
3. Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)
4. Direct observation of the initial nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs
5. Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
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1. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
2. Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes;Journal of Alloys and Compounds;2019-01
3. Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells;Solar Energy;2013-12
4. Micro-Raman characterization of InGaN/GaN single quantum well nanocolumns on Si(111) substrate;Journal of Applied Spectroscopy;2013-09
5. Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties;Journal of Applied Physics;2013-03-28
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