High current density and high PVCR Si/Si1−xGex DQW RTD formed with quadruple-layer buffer-Reference-Cited by-同舟云学术

High current density and high PVCR Si/Si1−xGex DQW RTD formed with quadruple-layer buffer

Published:2007-04 Issue: Volume:301-302 Page:1017-1020
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Maekawa Hirotaka,Sano Yoshihiro,Ueno Chihiro,Suda Yoshiyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1−xGex/Si triple barrier diodes

2. Y. Suda, ECS in: M. Cahay et al. (Eds.), Proceedings Volume on Advanced Luminescent Materials and Quantum Confinement II, vol. PV2002-9, The Electrochemical Society Inc., New Jersey, 2002, p. 47.

3. Surface morphology of related GexSi1−xfilms

4. High PVCR Si/Si1−xGex DW RTD formed with new triple-layer buffer

5. Strain relaxation kinetics in Si1−xGex/Si heterostructures

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