High PVCR Si/Si1−xGex DW RTD formed with new triple-layer buffer-Reference-Cited by-同舟云学术

High PVCR Si/Si1−xGex DW RTD formed with new triple-layer buffer

Published:2005-02 Issue:1-3 Volume:8 Page:417-421
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Maekawa Hirotaka,Shoji Masatsugu,Suda Yoshiyuki

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1−xGex/Si triple barrier diodes

2. n-type Si/SiGe resonant tunnelling diodes

3. Surface morphology of related GexSi1−xfilms

4. 4. Yamaguchi S, Meguro A, Suda Y. Extended abstract of international conference on solid state devices and materials Tokyo: Japan Society of Applied Physics; 2001. p. 58.

5. Suda Y. In: Cahay M, et al, editor. ECS Proceedings volume on advanced luminescent materials and quantum confinement II. NJ: The Electrochemical Society Inc., 2002. p. 47.

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5. Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1−xGex/Si(100) heterostructure;Applied Surface Science;2008-07