Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Correlation between x‐ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices
2. Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector
3. Oxygen-related deep level defects in solid-source MBE grown GaInP
4. Persistent photoconductivity in InGaP/GaAs heterostructures
5. Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Growth Temperature on the Characteristics of Single-Junction p–i–n InGaP Solar Cells;Journal of Nanoscience and Nanotechnology;2017-04-01
2. Growth and characterisation of layers with composition close to crossover from direct to indirect band gap;Journal of Crystal Growth;2005-02
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