Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates
2. Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
3. Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition
4. Surface‐diffusion model in selective metalorganic chemical vapor deposition
5. Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
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2. Selective area growth of GaAs on silicon;Asia Communications and Photonics Conference 2014;2014
3. Epitaxial growth of three-dimensionally architectured optoelectronic devices;Nature Materials;2011-07-24
4. Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique;Japanese Journal of Applied Physics;2009-04-20
5. Epitaxial lateral overgrowth of InGaAs on SiO2from (111) Si micro channel areas;physica status solidi (c);2008-07
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