Behaviors of AlxGa1−xN (0.5⩽x⩽1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN
2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
3. Solar-blind AlGaN photodiodes with very low cutoff wavelength
4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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