Growth of ultra small self-assembled InGaN nanotips
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
2. Nitride-based semiconductors for blue and green light-emitting devices
3. Progress and prospect of group-III nitride semiconductors
4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
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2. Size effect on compression properties of GaN nanocones examined using in situ transmission electron microscopy;Journal of Alloys and Compounds;2014-06
3. Self-organized InGaN nanodots grown by metal-organic chemical vapor deposition system;Optical Review;2009-05
4. CVD growth of InGaN nanowires;Journal of Alloys and Compounds;2009-01
5. High‐quality In0.47Ga0.53N/GaN heterostructure on Si(111) and its application to MSM detector;Microelectronics International;2008-04-18
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