Diffusion barrier performances of direct current sputter-deposited Mo and MoxN films between Cu and Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis‐dimethyl‐amino titanium in the Cu/TiN/Si structure
2. Effects of oxygen in TiNxon the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structures
3. Thermal stability of a Cu/Ta multilayer: an intriguing interfacial reaction
4. Diffusion barrier properties of TiW between Si and Cu
5. Grain growth, agglomeration and interfacial reaction of copper interconnects
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