Photoluminescence study of Si-doped (112̄0)a-plane GaN grown on (11̄02)r-plane sapphire by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer;Journal of Crystal Growth;2017-06
2. Synthesis and characterization of silicon-doped polycrystalline GaN films by r.f. sputtering;Bulletin of Materials Science;2015-09
3. Investigation of Fermi level pinning at semipolar (11–22) p -type GaN surfaces;Superlattices and Microstructures;2015-01
4. Characterization of a-plane InGaN light-emitting diodes with a SiNx interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition;Japanese Journal of Applied Physics;2014-10-22
5. Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels;Journal of Crystal Growth;2013-05
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