Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels-Reference-Cited by-同舟云学术

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Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels

Published:2013-05 Issue: Volume:370 Page:22-25
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Man Song Keun,Min Kim Jong,Soo Shin Chan,Gi Ko Chul,Koun Cho Hyung,Ho Yoon Dae,Min Hwang Sung,Kim Hogyoung

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. The Blue Laser Diode;Nakamura,1997

2. GaN: Processing, defects, and devices

3. Spontaneous polarization and piezoelectric constants of III-V nitrides

4. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels;Materials Science in Semiconductor Processing;2020-08

2. Optical and electrical improvements of semipolar (11−22) GaN-based light emitting diodes by Si doping of n-GaN template;Journal of Alloys and Compounds;2014-06

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