Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors-Reference-Cited by-同舟云学术

Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors

Published:2021-11 Issue: Volume:574 Page:126286
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fukuda Tsuguo,Shiraishi Yuji,Nanto Toki,Fujii Takashi,Sugiyama Kazumasa,Simura Rayko,Iechi Hiroyuki,Tadatomo Kazuyuki

Funder

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. ScAlMgO4: an Oxide substrate for GaN epitaxy, Materials Research Society;Hellman;Int. J. Nitride Semicond. Res.,1996

2. High-temperature thermal expansion of ScAlMgO4 for substrate application of GaN and ZnO epitaxial growth;Simura;Jpn. J. Appl. Phys.,2015

3. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces;Iwabuchi;Phys. Stat. Sol. (a),2017

4. S. Kayamoto, T. Fujii, T. Fukuda, R. Sugie, S. Mouri, T. Araki, submitted into J. Cryst. Growth.

5. Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates;Ozaki;Appl. Phys. Express,2014

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