Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE-Reference-Cited by-同舟云学术

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Published:2019-04 Issue: Volume:512 Page:78-83
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nagamatsu Kentaro,Ando Yuto,Kono Tsukasa,Cheong Heajeong,Nitta Shugo,Honda Yoshio,Pristovsek Markus,Amano Hiroshi

Funder

Japan Science and Technology Agency

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

3. High performance and high reliability AlGaN/GaN HEMTs

4. CS Man Tech Conference, April 24–27, 2006, Vancouver, British Columbia, Canada;Mitani,2006

5. Vertical Power p-n Diodes Based on Bulk GaN

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy;physica status solidi (a);2024-06-27

2. Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique;Applied Physics Express;2024-03-01

3. Controllable step-flow growth of GaN on patterned freestanding substrate;Journal of Semiconductors;2024-02-01

4. Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates;physica status solidi (RRL) – Rapid Research Letters;2023-11-08

5. Origins of epitaxial macro-terraces and macro-steps on GaN substrates;Journal of Applied Physics;2023-05-08