Optimization of crucible and heating model for large-sized silicon carbide ingot growth in top-seeded solution growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Optimizing the Temperature Profile during Sublimation Growth of SiC Single Crystals: Control of Heating Power, Frequency, and Coil Position
2. The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals
3. Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals
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1. Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2024-10
2. Novel application of high temperature solution growth method in simultaneously preparing SiC/Ti3SiC2/TiC using photovoltaic Si waste and Ti-bearing blast furnace slag;Journal of Cleaner Production;2024-04
3. Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals;CrystEngComm;2024
4. Effects of crystal rotation on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2023-04
5. Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth;Materials;2023-01-12
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