Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE-Reference-Cited by-同舟云学术

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Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

Published:2019-04 Issue: Volume:512 Page:11-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bucamp A.,Coinon C.,Codron J.-L.,Troadec D.,Wallart X.,Desplanque L.

Funder

DIRAC-III-V

French Technological Network Renatech

Région Hauts de France

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Replacement fin processing for III–V on Si: From FinFets to nanowires

2. Quantized Conduction and High Mobility in Selectively Grown InxGa1–xAs Nanowires

3. Substrate temperature lowering in GaAs selective epitaxial growth by molecular‐beam epitaxy

4. Control of InGaAs and InAs facets using metal modulation epitaxy

5. Kuroda et al., Conference Proceedings, Fifth International Conference on Indium Phosphide and Related Materials, 1993, 1993, pp. 52–55.

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4. Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation;Materials;2022-08-26

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