Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method-Reference-Cited by-同舟云学术

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Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method

Published:2014-09 Issue: Volume:401 Page:367-371
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Iwaya Motoaki^ORCID,Yamamoto Taiji,Tanaka Daiki,Iida Daisuke,Kamiyama Satoshi,Takeuchi Tetsuya,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

2. Key inventions in the history of nitride-based blue LED and LD

3. Characteristics of InGaN laser diodes in the pure blue region

4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

5. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SIGNIFICANCE OF DX-CENTERS FOR ACOUSTIC INDUCED RECONSTRUCTION PROCESSES OF DEFECTS IN GaN/AlGaN;Optoelektronìka ta napìvprovìdnikova tehnìka;2021-12-07

2. Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system;Sādhanā;2020-09-25

3. Gallium Nitride as an Electromechanical Material;Journal of Microelectromechanical Systems;2014-12

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