Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals-Reference-Cited by-同舟云学术

Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals

Published:2014-01 Issue: Volume:386 Page:9-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohtani Noboru,Ohshige Chikashi,Katsuno Masakazu,Fujimoto Tatsuo,Sato Shinya,Tsuge Hiroshi,Ohashi Wataru,Yano Takayuki,Matsuhata Hirofumi,Kitabatake Makoto

Funder

Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

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2. Structural defects in α-SiC single crystals grown by the modified-Lely method

3. SiC Seeded Crystal Growth

4. N. Ohtani, J. Takahashi, M. Katsuno, H. Yashiro, M. Kanaya, in: Proceedings of the Materials Research Society Symposium, vol. 510, 1998, 37p.

5. X-ray Scattering from Semiconductors;Fewster,2003

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