Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates-Reference-Cited by-同舟云学术

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Published:2013-11 Issue: Volume:382 Page:80-86
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kelchner Kathryn M.,Kuritzky Leah Y.,Fujito Kenji,Nakamura Shuji,DenBaars Steven P.,Speck James S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

1. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

2. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Characterization of blue-green m-plane InGaN light emitting diodes

5. Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN;Nanomaterials;2024-04-25

2. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

3. Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle;Optical Materials Express;2021-12-14

4. Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures;Nano Energy;2020-10

5. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices;Journal of Applied Physics;2020-05-14

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