Experimental study of grain boundary orientations in multi-crystalline silicon-Reference-Cited by-同舟云学术

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Experimental study of grain boundary orientations in multi-crystalline silicon

Published:2014-09 Issue: Volume:401 Page:404-408
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Duffar T.,Nwosu C.T.,Asuo I.M.,Muzy J.,Chau N.D.Q.,Du Terrail-Couvat Y.,Robaut F.

Funder

OSEO-SNC

ANR-SiX

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. T.F. Ciszek, T.H. Wang, R.W. Burrows, X. Wu, J. Alleman, T. Bekkedahl, Y.S. Tsuo, Proceedings of the 23rd IEEE PV Specialist Conference, Louisville KY, ISBN 0-7803-1220-1, 1993, pp. 101–105.

2. The Physics of Solar Cells;Nelson,2003

3. S. Dubois, PhD-Thesis, Univ. Paul Cézanne-Marseille III, 2007 (in French).

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2. Three-dimensional cellular automaton modeling of silicon crystallization with grains in twin relationships;Acta Materialia;2020-06

3. The twin formations on different growth planes of silicon crystal growth from melt by a molecular dynamics study;Physica B: Condensed Matter;2019-11

4. Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet;Acta Materialia;2017-06

5. In situ observation of twin boundary formation at grain-boundary groove during directional solidification of Si;Scripta Materialia;2017-05

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