Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates
Author:
Funder
Lockheed Martin Corporation
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes
2. Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
3. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
4. Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire
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1. Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth;physica status solidi (b);2024-01-07
2. Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy;physica status solidi (b);2021-08-20
3. The 2020 UV emitter roadmap;Journal of Physics D: Applied Physics;2020-09-16
4. Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2020-03-06
5. MOVPE of Group-III Heterostructures for Optoelectronic Applications;Crystal Research and Technology;2019-04-15
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