In-situ decomposition and etching of AlN and GaN in the presence of HCl
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Growth of GaN in a planetary MOCVD hotwall system
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3. GaN-based optoelectronics on silicon substrates
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1. Theoretical study on gas‐phase reactions during chemical vapor deposition of TixAl1–xN from TiCl4, AlCl3, and NH3;International Journal of Chemical Kinetics;2024-07-09
2. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13
3. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress;Materials Today;2021-10
4. A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl);Journal of Crystal Growth;2020-03
5. In situ and selective area etching of GaN by tertiarybutylchloride (TBCl);Applied Physics Letters;2019-10-14
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