Controlling indium incorporation in InGaN barriers with dilute hydrogen flows
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling;Park;Appl. Phys. Lett.,2009
2. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers;Kuo;Appl. Phys. Lett.,2009
3. InGaN: an overview of the growth kinetics, physical properties and emission mechanisms;Yam;Superlattices Microstruct.,2008
4. Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control;Creighton;J. Cryst. Growth,2008
5. Indium adsorption on GaN under metal-organic chemical vapor deposition conditions;Jiang;Appl. Phys. Lett.,2006
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD;Applied Physics Letters;2022-11-21
2. The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes;Optics & Laser Technology;2022-01
3. The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties;Nanoscale Research Letters;2021-11-02
4. Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells;Journal of Alloys and Compounds;2021-09
5. Effect of Barrier Temperature on Photoelectric Properties of GaN-Based Yellow LEDs*;Chinese Physics Letters;2020-03-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3