Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches-Reference-Cited by-同舟云学术

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Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches

Published:2014-09 Issue: Volume:401 Page:308-313
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Byongju,Kim Sun-Wook,Jang Hyunchul,Kim Jeong-Hoon,Koo Sangmo,Kim Dae-Hyun,Min Byoung-Gi,Park Se-Jeong,Song Jason S.,Ko Dae-Hong

Funder

IT R&D Program of MKE/KEIT

Joint Program for Samsung Electronics Co., Ltd. (SEC)–Yonsei University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Semiconductor Physics and Devices: Basic Principles;Neamen,2012

3. (Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe nano-heteroepitaxy: An investigation of the nano-template;Journal of Crystal Growth;2019-12

2. Morphology of films and nanostructures grown on trenched substrates by Monte Carlo simulations;Thin Solid Films;2019-11

3. Effect of thermal annealing on the interface quality of Ge/Si heterostructures;Scripta Materialia;2019-09

4. Analysis of anisotropic in-plane strain behavior in condensed Si1−x Ge x fin epitaxial layer using X-ray reciprocal space mapping;Japanese Journal of Applied Physics;2019-02-04

5. Nano-Heteroepitaxy: An Investigation of SiGe Pillars Coalescence;ECS Journal of Solid State Science and Technology;2019

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