The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system-Reference-Cited by-同舟云学术

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The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system

Published:2014-01 Issue: Volume:385 Page:22-27
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hur Min-Jae,Han Xue-Feng,Song Dong-Seok,Kim Tae-Hyung,Lee Nam-Jin,Jeong Young-Jin,Yi Kyung-Woo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. 3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth;Demina;Journal of Crystal Growth,2011

2. Dislocation of Cz-sapphire substrate for GaN growth by chemical etching method;Xin-huan;Transactions of Nonferrous Metals Society of China,2006

3. Modern trends in crystal growth and new applications of sapphire;Akselrod;Journal of Crystal Growth,2012

4. S.D. Won, Y.H. Moon, K.R. Patent no. 10-2012-0084046

5. Efects of ampoule rotation on vertical zone-melting crystal growth: steady rotation versus accelerated crucible rotation technique;Lan;Journal of Crystal Growth,1999

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