Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
2. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
3. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
4. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
5. Effect of strain compensation on quantum dot enhanced GaAs solar cells
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1. Optimization of digital image processing to determine quantum dots’ height and density from atomic force microscopy;Ultramicroscopy;2018-01
2. Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells;IEEE Journal of Photovoltaics;2016-03
3. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing;Journal of Alloys and Compounds;2016-01
4. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs;Scripta Materialia;2015-07
5. Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In)GaAs surrounding material;Journal of Luminescence;2014-04
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