Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates-Reference-Cited by-同舟云学术

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Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates

Published:2014-09 Issue: Volume:401 Page:559-562
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Scaccabarozzi Andrea,Bietti Sergio,Fedorov Alexey,von Känel Hans,Miglio Leo,Sanguinetti Stefano^ORCID

Funder

CARIPLO Foundation (prj. SOQQUADRO

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Fabrication of GaAs devices;Baca;Inst. Electr. Eng.,2005

2. Concentrator Photovoltaics;Luque,2007

3. Semiconductor Laser Fundamentals;Chow,1999

4. Hybrid integration for silicon photonics applications;Grenouillet;Opt. Quantum Electron.,2012

5. GaAs epitaxy on Si substrates: modern status of research and engineering;Bolkhovityanov;Uspekhi Fizicheskih Nauk,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates*;Chinese Physics B;2021-01-01

2. Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping;Chinese Physics Letters;2015-02

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