Growth of low etch pit density ZnGeP2 crystals by the modified vertical Bridgman method
Author:
Funder
National Natural Science Foundation
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of dynamics of big size ZnGeP2 crystal growth by vertical Bridgman technique;B POL ACAD SCI-TECH;2018
2. Influence of SiC surface defects on materials removal in atmospheric pressure plasma polishing;Computational Materials Science;2018-04
3. Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method;Journal of Crystal Growth;2016-07
4. Vertical Bridgman Growth of Binary Compound Semiconductors;Handbook of Crystal Growth;2015
5. Phase equilibria in the ZnGeAs2–CdGeAs2 system;Journal of Alloys and Compounds;2014-06
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