Modeling and simulation of AlN bulk sublimation growth systems
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
2. Substrates for gallium nitride epitaxy
3. Aluminum nitride substrate growth by halide vapor transport epitaxy
4. On mechanisms of sublimation growth of AlN bulk crystals
5. Transport effects in the sublimation growth of aluminum nitride
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1. Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases;CrystEngComm;2024
2. Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation;Industrial & Engineering Chemistry Research;2023-10-19
3. Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17
4. Growth of bulk AlN crystals;Reference Module in Materials Science and Materials Engineering;2023
5. Influence of sublimation surface on mass transport in AlN crystal growth by physical vapor transport process;AIP Advances;2022-05-01
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