Single crystal growth of GaN by the temperature gradient Na flux method-Reference-Cited by-同舟云学术

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Single crystal growth of GaN by the temperature gradient Na flux method

Published:2004-06 Issue:4 Volume:266 Page:461-466
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Aoki Masato,Yamane Hisanori,Shimada Masahiko,Sarayama Seiji,Iwata Hirokazu,DiSalvo Francis J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. GaN: Processing, defects, and devices

2. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

3. Growth and characterization of low defect GaN by hydride vapor phase epitaxy

4. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoelectric Materials and Applications: A Review;Energies;2023-09-04

2. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27

3. Progress of Na-Flux Method for Large-Size GaN Single Crystal Growth;Journal of Electronic Materials;2022-09-16

4. Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt;Crystals;2021-09-02

5. Synthesis of GaN crystals through the reaction of gallium with lithium amide;Journal of the Ceramic Society of Japan;2017

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