The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry
2. X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes
3. Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE
4. As Surface Segregation during the Growth of GaInP on GaAs
5. Suppression of In surface segregation and growth of modulation‐dopedN‐AlGaAs/InGaAs/GaAs structures with a high In composition by molecular‐beam epitaxy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2012-05-02
2. Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM;Journal of Crystal Growth;2012-05
3. Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2012-05-01
4. Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2009-01-20
5. Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy;Applied Physics Letters;2008-03-17
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